Andrew J Wright

Title: The Innovations of Andrew J Wright

Introduction

Andrew J Wright is a notable inventor based in Malvern, GB. He has made significant contributions to the field of materials science, particularly in the manufacturing of advanced semiconductor materials. His work has implications for integrated circuitry and electronic devices.

Latest Patents

Andrew J Wright holds a patent for the "Manufacture of cadmium mercury telluride on patterned silicon." This invention relates to the growth of Cadmium Mercury Telluride (CMT) on silicon substrates that bear integrated circuitry. The method involves growing CMT in selected growth windows on the silicon substrate by first creating one or more buffer layers through Molecular Beam Epitaxy (MBE) and then growing the CMT using Metal-Organic Vapor Phase Epitaxy (MOVPE). The growth windows are defined by masking areas outside of them. Growth within these windows is crystalline, while any growth outside is polycrystalline and can be removed by etching. This innovative method allows for the direct growth of CMT structures on integrated circuits, eliminating the need for hybridization.

Career Highlights

Andrew J Wright is associated with Qinetiq Limited, where he has been instrumental in advancing research and development in semiconductor technologies. His expertise in materials science has positioned him as a key figure in his field.

Collaborations

Andrew has collaborated with notable colleagues, including Louise Buckle and John W Cairns, contributing to various projects that enhance the understanding and application of semiconductor materials.

Conclusion

Andrew J Wright's contributions to the field of semiconductor manufacturing are noteworthy. His innovative patent for the growth of Cadmium Mercury Telluride on patterned silicon showcases his commitment to advancing technology in integrated circuits. His work continues to influence the development of electronic devices and materials science.