Qinetiq Limited

Andrew J Wright

Neil Thomson Gordon

Jean Giess

Graham J Pryce

Colin John Hollier

Janet E Hails

Andrew Graham

Louise Buckle

John W Cairns

David J Hall

This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.

Manufacture of cadmium mercury telluride on patterned silicon

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Malvern, United Kingdom

Andrew J Wright