Glen T Cheney

Title: Glen T Cheney: Innovator in Memory Technology

Introduction

Glen T Cheney is a notable inventor based in Allentown, PA (US). He has made significant contributions to the field of memory technology, particularly with his innovative designs that enhance the efficiency of memory cells. His work has been recognized in the form of patents that showcase his expertise and creativity.

Latest Patents

Cheney holds a patent for a "Dual level polysilicon single transistor-capacitor memory array." This invention features a self-aligned one transistor-capacitor memory cell that utilizes an n-channel MOS transistor. The design includes separate drain and source regions, with a first level polysilicon conductor connected to the top plate of the capacitor. Additionally, separate second level polysilicon conductors are linked to the gate and drain of the transistor. This innovative approach achieves a reduction in the dimensions of the memory cell compared to similar designs that use only one level of conductors. Cheney's patent represents a significant advancement in memory technology.

Career Highlights

Glen T Cheney has worked with American Telephone & Telegraph Co. and AT&T Bell Laboratories, where he has contributed to various projects in the field of telecommunications and memory technology. His experience in these prestigious organizations has allowed him to develop and refine his innovative ideas.

Collaborations

Cheney has collaborated with notable coworkers, including Howard C Kirsch and James T Nelson. Their combined expertise has likely contributed to the success of their projects and innovations in the field.

Conclusion

Glen T Cheney is a distinguished inventor whose work in memory technology has led to significant advancements in the industry. His patent for the dual level polysilicon single transistor-capacitor memory array exemplifies his innovative spirit and technical expertise.