The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 1989
Filed:
Jan. 24, 1985
Applicant:
Inventors:
Glen T Cheney, Allentown, PA (US);
Howard C Kirsch, Colorado Springs, CO (US);
James T Nelson, Coopersburg, PA (US);
James H Stefany, Asbury, NJ (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 236 ; 357 41 ; 357 45 ; 357 59 ;
Abstract
A self-aligned one transistor-capacitor memory cell is provided which uses an n-channel MOS transistor having separate drain and source regions with a first level polysilicon conductor coupled to the top plate of the capacitor and separate second level polysilicon conductors coupled to the gate and drain of the transistor. A reduction in a dimension of the memory cell is acheived compared to a similar memory cell which uses only one level of conductors.