James H Stefany

Title: James H. Stefany: Innovator in Semiconductor Memory Technology

Introduction

James H. Stefany is a notable inventor based in Asbury, NJ (US), recognized for his contributions to semiconductor memory technology. He holds a total of 3 patents, showcasing his innovative approach to enhancing memory cell designs.

Latest Patents

One of his latest patents is the "Dual level polysilicon single transistor-capacitor memory array." This invention features a self-aligned one transistor-capacitor memory cell that utilizes an n-channel MOS transistor with separate drain and source regions. It incorporates a first level polysilicon conductor connected to the top plate of the capacitor, along with separate second level polysilicon conductors linked to the gate and drain of the transistor. This design achieves a reduction in the dimensions of the memory cell compared to similar cells that use only one level of conductors. Another significant patent is the "Semiconductor memory with boosted word line." This dynamic random access memory design boosts a row conductor beyond the power supply level during the initial part of a memory cycle. The voltage is then clamped at the supply level during the middle of the cycle and can be boosted again during the refresh portion. This innovation enhances performance and reliability, particularly in memories with bit lines precharged to half the power supply level.

Career Highlights

James H. Stefany has had a distinguished career, working at renowned institutions such as AT&T Bell Laboratories and American Telephone & Telegraph Co. His work in these organizations has significantly influenced the field of semiconductor technology.

Collaborations

Throughout his career, he has collaborated with notable individuals, including Howard C. Kirsch and Clinton H. Holder, Jr. These partnerships have contributed to the advancement of his innovative projects.

Conclusion

James H. Stefany's contributions to semiconductor memory technology through his patents and career achievements highlight his role as a significant inventor in the field. His work continues to impact the development of memory technologies today.