Glen H Walters

Title: Glen H. Walters: Innovator in Ferroelectric Materials

Introduction

Glen H. Walters is a prominent inventor based in Gainesville, FL (US). He has made significant contributions to the field of ferroelectric materials, holding a total of 2 patents. His work focuses on advanced materials and methods that enhance the performance of electronic devices.

Latest Patents

Walters' latest patents include innovative techniques for improving ferroelectricity and thermal retention through in situ hydrogen plasma treatment of doped hafnium oxide. One of his notable methods involves depositing a monolayer of a precursor on a first oxide monolayer, followed by the application of oxygen plasma to form a second oxide monolayer. This process creates oxygen vacancies in the second oxide monolayer through hydrogen plasma treatment. Another significant patent details a hafnium-zirconium oxide (HZO) ferroelectric transducer, which is designed for use in nano-mechanical acoustical resonators. These resonators are fabricated using CMOS compatible techniques, making them suitable for mm-wave RF front-ends and 5G wireless communication systems.

Career Highlights

Walters is affiliated with the University of Florida Research Foundation Inc., where he continues to push the boundaries of research in ferroelectric materials. His work has implications for the development of advanced electronic devices and communication systems.

Collaborations

Throughout his career, Walters has collaborated with notable colleagues, including Toshikazu Nishida and Mayur Ghatge. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Glen H. Walters is a key figure in the field of ferroelectric materials, with a focus on innovative methods that enhance electronic device performance. His contributions through patents and research continue to influence advancements in technology.