The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Aug. 20, 2020
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Toshikazu Nishida, Gainesville, FL (US);
Saeed Moghaddam, Gainesville, FL (US);
Glen H. Walters, Boise, ID (US);
Aniruddh Shekhawat, Gainesville, FL (US);
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC., Gainesville, FL (US);
Abstract
Various examples are provided related to hydrogen plasma treatment of hafnium oxide. In one example, a method includes depositing a monolayer of a precursor on a first oxide monolayer; forming a second oxide monolayer by applying an oxygen (O) plasma to the monolayer of the precursor; and creating oxygen vacancies in the second oxide monolayer by applying a hydrogen (H) plasma to the second oxide monolayer. In another example, a device includes a hafnium oxide (HfO) based ferroelectric thin film on a first side of a substrate and an electrode layer disposed on the HfObased ferroelectric thin film opposite the substrate. The HfOfilm includes a plurality of oxide monolayers including at least one HfOmonolayer, each of the plurality of oxide monolayers having oxygen vacancies distributed throughout that oxide monolayer.