This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: University of Florida Research Foundation Inc.. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Aniruddh Shekhawat: Innovator in Ferroelectric Materials
Introduction
Aniruddh Shekhawat is a notable inventor based in Gainesville, FL (US). He has made significant contributions to the field of materials science, particularly in the area of ferroelectric materials. His innovative work has led to the development of a unique patent that addresses the treatment of hafnium oxide.
Latest Patents
Aniruddh Shekhawat holds a patent titled "Ferroelectricity and thermal retention through in situ hydrogen plasma treatment of doped hafnium oxide." This patent includes various examples related to hydrogen plasma treatment of hafnium oxide. One example describes a method that involves depositing a monolayer of a precursor on a first oxide monolayer. It further explains the formation of a second oxide monolayer by applying an oxygen (O) plasma to the precursor monolayer. Additionally, the method creates oxygen vacancies in the second oxide monolayer by applying a hydrogen (H) plasma. Another example outlines a device that features a hafnium oxide (HfO) based ferroelectric thin film on one side of a substrate, with an electrode layer positioned on the opposite side. The HfO film consists of multiple oxide monolayers, including at least one HfO monolayer, each containing oxygen vacancies distributed throughout.
Career Highlights
Aniruddh Shekhawat is affiliated with the University of Florida Research Foundation Inc., where he continues to advance his research in ferroelectric materials. His work has garnered attention for its innovative approach to enhancing the properties of hafnium oxide.
Collaborations
Aniruddh has collaborated with esteemed colleagues such as Saeed Moghaddam and Glen H Walters. Their combined expertise contributes to the ongoing research and development in the field of materials science.
Conclusion
Aniruddh Shekhawat's contributions to the field of ferroelectric materials through his innovative patent demonstrate his commitment to advancing technology. His work not only enhances our understanding of hafnium oxide but also paves the way for future innovations in materials science.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile