Gerrit C Van Hoften

Title: Gerrit C. Van Hoften: Semiconductor and Ion Implantation Inventor.

Introduction

Gerrit C. Van Hoften is an inventor associated with Eindhoven, the Netherlands, and U.S. Philips Corporation. His work includes inventions in ion implantation and semiconductor-device manufacturing. He is credited with 2 patents.

Latest Patents

One of Van Hoften’s patents describes an ion implantation device arranged to select neutral ions from an ion beam. The device uses two successive deceleration stages: the first decelerates and deflects the beam to form an intermediate crossover, while the second further decelerates and converges the beam.

Another patent presents a method for manufacturing a semiconductor device with a thin buried silicide layer. Implantation first forms an amorphous layer, which heat treatment then converts into a buried silicide layer approximately 10 nanometers thick. The resulting structure is suitable for applications such as metal-base transistors.

Career Highlights

Van Hoften’s listed inventions address specialized processes and equipment for semiconductor fabrication. Together, they reflect work on controlling ion beams and forming thin buried layers within semiconductor devices.

Collaborations

Van Hoften’s listed coworkers include Jozef J. Ottenheim and Jarig Politiek. His company affiliation is U.S. Philips Corporation.

Conclusion

Gerrit C. Van Hoften’s patent record highlights contributions to ion implantation and semiconductor manufacturing, including techniques for beam control and the formation of thin buried silicide layers.