The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1993
Filed:
Mar. 09, 1992
Applicant:
Inventors:
Alfred H van Ommen, Eindhoven, NL;
Jozef J Ottenheim, Eindhoven, NL;
Erik H Dekempeneer, Wijnegem, BE;
Gerrit C van Hoften, Eindhoven, NL;
Assignee:
U.S. Philips Corp., New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437200 ; 437 24 ; 437 26 ; 437 27 ; 148D / ; 148D / ;
Abstract
A method of manufacturing a semiconductor device in which a thin buried silicide layer is formed by implantation includes the step of first forming an amorphous layer by implantation, which layer is then converted into the buried silicide layer by a heat treatment. A sufficiently thin buried silicide layer, of about 10 nm thickness, can be obtained in this manner, and the resulting structure is suitable, for example, for the manufacture of a metal-base transistor.