The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Sep. 21, 1999
Applicant:
Inventors:
Jarig Politiek, Baarn, NL;
Gerrit C. Van Hoften, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 3/7317 ;
U.S. Cl.
CPC ...
H01J 3/7317 ;
Abstract
An ion implantation device includes at least two successive deceleration stages the first deceleration stage, looking in the downstream direction, being arranged to decelerate the ion beam, to deflect the ion beam, and to form an intermediate crossover, whereas the second deceleration stage is arranged to decelerate the ion beam further and to subject the beam to a converging effect.
Politiek, Jarig. (2001). Ion implantation device arranged to select neutral ions from the ion beam (U.S. Patent No. 6326631). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6326631
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile