Toulouse, France

Gerard J Bouisse

This inventor holds 31 USPTO granted patents and 6 published patent applications and 7 EPO patents, primarily in RF Power Amplifiers. Top assignees: Macom Technology Solutions Holdings, Inc., Nxp USA, Inc., Freescale Semiconductor,inc.. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gerard J Bouisse. Retrieved from https://idiyas.com/inventor/gerard-j-bouisse

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.8

ph-index = 9

Forward Citations = 169(Granted Patents)


Company Filing History:


Years Active: 2012-2026

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Areas of Expertise:
RF Amplifiers
Doherty Amplifier
Broadband Network
High-Efficiency
Power Amplifier
RF Transistor
Impedance Inverter
Wireless Communication
Integrated Circuits
No-Load Modulation
31 patents (USPTO):Explore Patents

Title: **Gerard J Bouisse: Innovator in Power Amplifier Technology**

Introduction

Gerard J Bouisse is a prominent inventor based in Toulouse, France, with an impressive portfolio of 28 patents. His work primarily focuses on the development of advanced power amplifier technologies, significantly impacting telecommunications and signal processing.

Latest Patents

Among his latest innovations, Bouisse has developed a "Broadband, high-efficiency, non-modulating power amplifier architecture." This patent describes apparatus and methods for a no-load-modulation power amplifier that consists of multiple amplifiers connected in parallel to amplify a signal divided into parallel circuit branches. The configuration allows one amplifier to operate as a main amplifier while others function as peaking amplifiers, resulting in high efficiency and minimal load modulation. Improvements over conventional Doherty amplifiers are particularly noteworthy, as the design incorporates both symmetric and asymmetric operation modes.

Another significant contribution is his patent on an "Inverted Doherty power amplifier with large RF fractional and instantaneous bandwidths." This groundbreaking work describes an inverted Doherty amplifier operating at gigahertz frequencies, showcasing how impedance-matching components can increase RF fractional bandwidth and signal bandwidth compared to traditional configurations.

Career Highlights

Bouisse has held influential positions at reputable companies such as Macom Technology Solutions Holdings, Inc. and NXP USA, Inc. His work in these organizations has contributed to advancements in power amplifier technologies that are crucial in modern communication systems.

Collaborations

Throughout his career, Gerard has collaborated with talented professionals, including Jeffrey Kevin Jones and Hussain Hasanali Ladhani. These partnerships have fostered a rich exchange of ideas and expertise, driving innovation in power amplifier architecture.

Conclusion

Gerard J Bouisse's contributions to the field of power amplifiers position him as a key figure in telecommunications technology. With his numerous patents and collaborative efforts, he continues to lead advancements that enhance signal efficiency and bandwidth in critical applications. His innovative spirit exemplifies the importance of ongoing research and development within the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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