The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 09, 2023
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventor:

Gerard Bouisse, Saint Lys, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 44/20 (2026.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H10W 70/60 (2026.01); H10W 70/63 (2026.01); H10W 72/20 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 44/20 (2026.01); H03F 1/565 (2013.01); H03F 3/195 (2013.01); H10W 70/611 (2026.01); H10W 70/635 (2026.01); H10W 90/00 (2026.01); H03F 2200/222 (2013.01); H10W 44/234 (2026.01); H10W 72/248 (2026.01); H10W 72/252 (2026.01); H10W 90/724 (2026.01);
Abstract

A radio frequency transistor amplifier package includes a package substrate with input, output, and ground terminals, and a transistor die on the package substrate. The transistor die includes a semiconductor structure having a plurality of transistors and gate, drain, and source contacts electrically coupled thereto. An inductance adjustment element is electrically coupled between the source contacts and the ground terminal, and is configured to provide a stability factor K of greater than or equal to 1 for a first operating frequency range of the transistor die. Related devices and methods are also discussed.


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