Location History:
- Stoneham, MA (US) (1982)
- Chelmsford, MA (US) (1988 - 1993)
- Westford, MA (US) (2004)
Company Filing History:
Years Active: 1982-2004
Title: Innovations of George W. Turner
Introduction
George W. Turner is a notable inventor based in Chelmsford, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advancing the capabilities of semiconductor lasers and improving film growth techniques.
Latest Patents
One of his latest patents is the GaSb-clad mid-infrared semiconductor laser. This invention describes a semiconductor laser that operates in the mid-infrared region. It features first and second cladding layers made of GaSb that surround an active core. The design ensures a low divergence angle while maintaining high power efficiency. Another notable patent involves the analysis of RHEED data from rotating substrates. This innovation utilizes a video tracking system and a program that employs frequency-domain analysis to extract RHEED intensity oscillation data for film growth on rotating substrates. Initial experiments on GaAs growth have shown excellent agreement between oscillation frequencies measured for static and rotating substrates.
Career Highlights
George W. Turner is affiliated with the Massachusetts Institute of Technology, where he continues to push the boundaries of semiconductor research. His work has been instrumental in enhancing the quality of complex epitaxial structures and interfaces.
Collaborations
He has collaborated with esteemed colleagues such as Hong K. Choi and Bor-Yeu Tsaur, contributing to the advancement of their shared research goals.
Conclusion
George W. Turner is a prominent figure in the field of semiconductor technology, with a focus on innovative laser designs and film growth techniques. His contributions have the potential to significantly impact the industry and advance technological capabilities.