The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1982
Filed:
Jan. 09, 1981
Applicant:
Inventors:
George W Turner, Stoneham, MA (US);
John C Fan, Chestnut Hill, MA (US);
Jack P Salerno, Waltham, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136258 ; 136262 ; 148 15 ; 148188 ; 204 / ; 204 / ; 357 30 ; 357 59 ; 357 63 ; 357 64 ;
Abstract
A method of compensating grain boundaries or dislocations causing interstices to form particularly in polycrystalline semiconductor materials is disclosed which comprises selectively diffusing opposite impurity-type donor semiconductor material into the interstice to thereby reduce the conductivity of the interstice.