The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1993
Filed:
Jan. 27, 1992
Applicant:
Inventors:
George W Turner, Chelmsford, MA (US);
Adrian J Isles, Silver Spring, MD (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156601 ; 156610 ; 156611 ; 156612 ; 156D / ; 437105 ; 422105 ; 118716 ; 118719 ;
Abstract
A video tracking system and a program employing frequency-domain analysis for extracting RHEED intensity oscillation data for film growth on rotating substrates. In initial experiments on GaAs growth, excellent (2%) agreement has been obtained between oscillation frequencies measured for static substrates and substrates with rotation rates as high as 10 rpm. The capability of performing RHEED analysis on rotating substrates could lead to improvements in the quality of complex epitaxial structures and interfaces for which interrupting rotation can have a deleterious effect.