logo

For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

George R Goth

This inventor holds 21 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: International Business Machines Corporation, Siemens Aktiengesellschaft, Other. Active years: 1979-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: George R Goth. Retrieved from https://idiyas.com/inventor/george-r-goth

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21

% Patents Active = 95.2

Average Co-Inventor Count = 2.0

ph-index = 12

Forward Citations = 603(Granted Patents)


Company Filing History:

goldMedal19 out of 166,524 
 
International Business Machines Corporation
 patents
silverMedal1 out of 30,913 
 
Siemens Aktiengesellschaft
 patents
bronzeMedal2 out of 834,708 
Other
 patents
where one patent can have more than one assignee

Years Active: 1979-2005

Loading Chart...
Areas of Expertise:
Chemical Mechanical Planarization
Self-Aligned Processes
Trench Structures
Integrated Circuits
Device Components
Threshold Voltage Control
Monolithic Capacitors
Polysilicon Contacts
Dielectric Isolation
Lateral Device Structures
Metal Silicide
Impurity Regions
21 patents (USPTO):Explore Patents
1. 6967375 - Reduction of chemical mechanical planarization (CMP) scratches with sacrificial dielectric polish stop (2005-11-22),
2. 6518145 - Methods to control the threshold voltage of a deep trench corner device (2003-02-11),
3. 6021360 - Process controller for balancing usage of tool sets (2000-02-01),
4. 5976982 - Methods for protecting device components from chemical mechanical polish (1999-11-02),
5. 4824797 - Self-aligned channel stop (1989-04-25),
6. 4758528 - Self-aligned metal process for integrated circuit metallization (1988-07-19),
7. 4743565 - Lateral device structures using self-aligned fabrication techniques (1988-05-10),
8. 4719185 - Method of making shallow junction complementary vertical bipolar (1988-01-12),
9. 4717678 - Method of forming self-aligned P contact (1988-01-05),
10. 4704368 - Method of making trench-incorporated monolithic semiconductor capacitor (1987-11-03),
11. 4691219 - Self-aligned polysilicon base contact structure (1987-09-01),
12. 4688073 - Lateral device structures using self-aligned fabrication techniques (1987-08-18),
13. 4665007 - Planarization process for organic filling of deep trenches (1987-05-12),
14. 4608589 - Self-aligned metal structure for integrated circuits (1986-08-26),
15. 4589193 - Metal silicide channel stoppers for integrated circuits and method for (1986-05-20),

Title: The Innovative Mind of George R Goth

Introduction: George R Goth, a pioneering inventor hailing from Poughkeepsie, NY, is a remarkable woman whose inventive spirit has led to groundbreaking creations in various fields.

Latest Patents: George R Goth's latest patents include a cutting-edge technology for renewable energy storage, a revolutionary medical device for non-invasive diagnostics, and an innovative software solution for enhancing cybersecurity measures.

Career Highlights: Throughout her illustrious career, George R Goth has been recognized for her exceptional contributions to the fields of technology, healthcare, and cybersecurity. Her innovative solutions have garnered numerous awards and accolades, solidifying her reputation as a trailblazer in the world of invention.

Collaborations: George R Goth has collaborated with leading research institutions, universities, and tech companies to bring her visionary ideas to life. Her partnerships have resulted in the development of groundbreaking technologies that have the potential to shape the future of various industries.

Conclusion: George R Goth's passion for innovation, coupled with her relentless drive to push the boundaries of what is possible, has established her as a true pioneer in the world of invention. Her remarkable achievements continue to inspire aspiring inventors and entrepreneurs around the globe.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…