Georg Schulze-Icking

Title: Georg Schulze-Icking: Innovator in PVD Technology

Introduction

Georg Schulze-Icking is a notable inventor based in Ottobrunn, Germany. He has made significant contributions to the field of physical vapor deposition (PVD) technology. With a total of 3 patents, his work focuses on enhancing the efficiency and uniformity of coating processes.

Latest Patents

One of his latest patents is a PVD method and apparatus that utilizes a rotating magnetic field to increase yield. This innovative approach ensures that the magnetic field essentially vanishes outside the rotation axis in specific sectors of the target region, leading to a uniform coating. Another significant patent involves a process for depositing WSix layers on high topography substrates with defined stoichiometry. In this process, tungsten silicide layers are formed on a substrate, particularly for semiconductor components with deep trench capacitors. The deposition occurs at temperatures below 400°C and pressures under 10 torr, using a vapor phase that contains both tungsten and silicon precursor substances.

Career Highlights

Georg Schulze-Icking is currently associated with Infineon Technologies AG, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing PVD methods that are crucial for modern electronics.

Collaborations

He has collaborated with notable coworkers, including Alfred Kersch and Annette Sänger, contributing to various projects that enhance the capabilities of PVD technology.

Conclusion

Georg Schulze-Icking's contributions to PVD technology and his innovative patents reflect his commitment to advancing the field. His work continues to influence the semiconductor industry significantly.