Infineon Technologies Ag

Georg Schulze-Icking

Alfred Kersch

Bernhard Sell

Ralf Zedlitz

Annette S&auml;nger

Thomas Witke

Winfried Sabisch

A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

PVD method and PVD apparatus

Tungsten silicide layers are formed on a substrate and a semiconductor component has deep trench capacitors with a filling of tungsten silicide. The tungsten silicide layers are deposited on the substrate at a temperature of less than 400&deg; C. and at a pressure of less than 10 torr from the vapor phase. The vapor phase hs a tungsten-containing precursor substance and a silicon-containing precursor substance. The molar ratio of the silicon-containing precursor compound to the tungsten-containing precursor compound in the vapor phase is selected to be greater than 500.

Process for depositing WSix layers on a high topography with a defined stoichiometry

The invention relates to a method for fabricating a microtechnical structure ( ) having a depression ( ), which has a high aspect ratio. In order to achieve a good filling behavior, it is proposed to increase the quantity of the passivating particles which are present in the reactor and passivate the surface of the structure ( ) against further addition of the filling material ( ). With suitable process control, the additional passivation has an effect essentially only on the side walls ( ) of the depression ( ).

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Ottobrunn, Germany

Georg Schulze-Icking