Georg Raming

Title: Georg Raming: Innovator in Silicon Crystal Production

Introduction

Georg Raming is a notable inventor based in Tann, Germany, recognized for his contributions to the field of silicon crystal production. With a total of seven patents to his name, Raming has made significant advancements in the methods and devices used for creating high-quality silicon crystals.

Latest Patents

Among his latest patents is a method and device for producing a single crystal of silicon that is doped with n-type dopant. This innovative approach involves growing single crystal silicon cylindrical portions by the Czochralski (CZ) method, which are highly doped to achieve a resistivity of not more than 2 mΩcm. The process directs dopant in a gas flow from an external sublimation apparatus into the pulling chamber, enhancing the efficiency of the production. Another significant patent involves a single crystal of silicon with <100> orientation, which is also doped with n-type dopant. This patent details the structure of the crystal, including a starting cone, a cylindrical portion, and an end cone, with specific angles and dimensions that optimize the crystal's properties.

Career Highlights

Georg Raming is currently employed at Siltronic AG, a leading company in the semiconductor industry. His work focuses on the development of advanced silicon materials that are essential for various electronic applications. Raming's expertise in crystal growth techniques has positioned him as a key figure in the field.

Collaborations

Throughout his career, Raming has collaborated with esteemed colleagues such as Ludwig Altmannshofer and Alfred Miller. These partnerships have fostered innovation and contributed to the successful development of new technologies in silicon production.

Conclusion

Georg Raming's contributions to the field of silicon crystal production through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the semiconductor industry positively.