The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Dec. 03, 2020
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Wolfgang Staudacher, Munich, DE;
Georg Raming, Tann, DE;
Assignee:
SILTRONIC AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 15/10 (2006.01); C30B 15/26 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); C30B 15/10 (2013.01); C30B 15/26 (2013.01); C30B 29/06 (2013.01);
Abstract
Single crystal silicon cylindrical portions grown by the CZ method and highly doped with one or more n-type dopants so as to have a resistivity of not more than 2 mΩcm are prepared by directing dopant in a gas flow from an external sublimation apparatus into the pulling chamber through or below the heat shield, to the bottom of an annular ring of the heat shield and from there through a plurality of nozzles toward the surface of the melt.
Staudacher, Wolfgang. (2024). Method and device for producing a single crystal of silicon, which single crystal is doped with n-type dopant (U.S. Patent No. 12104274). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12104274
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile