Siltronic Ag

Georg Raming

Ludwig Altmannshofer

Alfred Miller

Gundars Ratnieks

Georg Brenninger

Andreas Sattler

Walter Heuwieser

Frank Muemmler

Matthias Daniel

Josef Lobmeyer

Wolfgang Staudacher

Ludwig Stockmeier

Martin Moeller

Johann Landrichinger

Alfred Holzinger

Jochen Friedrich

Johann-Andreas Huber

Frank Mümmler

Martin Möller

Single crystal silicon cylindrical portions grown by the CZ method and highly doped with one or more n-type dopants so as to have a resistivity of not more than 2 mΩcm are prepared by directing dopant in a gas flow from an external sublimation apparatus into the pulling chamber through or below the heat shield, to the bottom of an annular ring of the heat shield and from there through a plurality of nozzles toward the surface of the melt.

Method and device for producing a single crystal of silicon, which single crystal is doped with n-type dopant

Single crystal silicon with &#x3c;100&#x3e; orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20&#xb0; and not greater than 30&#xb0; in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 &#x3bc;m.

Single crystal of silicon with &#x3c;100&#x3e; orientation, which is doped with n-type dopant, and method for producing such a single crystal

A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater which surrounds and applies thermal radiation to the crystallizing single crystal, and a separating bottom which delimits downward an intermediate space between the reheater and a wall of the housing at a lower end of the reheater.

Device for producing a monocrystal by crystallizing said monocrystal in a melting area

A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.

Method for growing a single crystal by crystallizing the single crystal from a float zone

A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil.

Apparatus and process for producing a crystal of semiconductor material

Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance &#x394; between an outer triple point Tat the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Method and apparatus for producing a single crystal

Silicon semiconductor wafers are produced by:

Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm

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Tann, Germany

Georg Raming