Geoff W Taylor

Title: Innovations of Geoff W Taylor

Introduction

Geoff W Taylor is a notable inventor based in Wilton, NH (US). He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on integrated circuitry and methodologies that enhance the performance and efficiency of electronic devices.

Latest Patents

One of his latest patents is titled "Semiconductor integrated circuit and methodology for making same." This invention involves the fabrication of integrated circuitry from semiconductor layers formed on a substrate. The structure includes at least one n-type layer, an inverted p-type modulation doped quantum well (mod-doped QW) structure, a non-inverted n-type mod-doped QW structure, and at least one p-type layer. The process includes an etch operation that exposes the second p-type layer, followed by the implantation of p-type ions into this exposed layer. The invention also details the formation of gate electrodes and source and drain electrodes for n-channel HFET devices, as well as the potential for creating p-channel HFET devices, complementary BICFET devices, and various optoelectronic devices.

Career Highlights

Geoff W Taylor has had a distinguished career, working with prominent companies such as Texas Instruments Corporation. His expertise in semiconductor technology has positioned him as a key figure in the development of innovative electronic solutions.

Collaborations

Throughout his career, Geoff has collaborated with notable professionals in the field, including Al F Tasch, Jr and Pallab K Chatterjee. These collaborations have contributed to the advancement of technology in semiconductor applications.

Conclusion

Geoff W Taylor's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the field of integrated circuitry and electronic devices.