The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1982
Filed:
Dec. 10, 1979
Al F Tasch, Jr, Richardson, TX (US);
Geoff W Taylor, Murray Hill, NJ (US);
Pallab K Chatterjee, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention is embodied in a dynamic random access memory (RAM) cell comprising a depletion mode field effect transistor structure with a p-n junction 'gate' electrode. The cell can be programmed to two threshold voltage states providing constant current sensing. Cell programming is by application of appropriate signals to the transistor 'gate' electrode and source. Reading is accomplished by sensing current through the transistor while the source is grounded. An intermediate voltage on the 'gate' electrode prevents changes in the state of the cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile