The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1980
Filed:
Jul. 03, 1978
Pallab K Chatterjee, Dallas, TX (US);
Geoff W Taylor, Dallas, TX (US);
Al F Tasch, Jr, Richardson, TX (US);
Horng-Sen Fu, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An MOS random access memory cell using the capacitance of a buried P-N junction as the storage element is formed by a process compatable with standard N-channel silicon gate manufacturing methods. The cell is fabricated using a method which consists of an implanted channel stopper underneath a thick field oxide, a buried, fully implanted charge storage element which also is the source of the cell transistor, self-aligned polysilicon gates, multilayer oxide and a thin film of metallization for interconnections. The vertical stacking of the charge storage and transfer elements and the increase in storage area to cell area ratio with the buried storage area provide a cell with very high packing density.