Moriches, NY, United States of America

Ge Yang

This inventor holds 5 USPTO granted patents. Top assignees: Brookhaven Science Associates, Lcc, Norfolk State University. Active years: 2013-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ge Yang. Retrieved from https://idiyas.com/inventor/ge-yang-oavyj2pz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 20.0

Average Co-Inventor Count = 7.3

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2013-2019

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5 patents (USPTO):Explore Patents

Title: Ge Yang: Innovator in Semiconductor Technologies

Introduction

Ge Yang is a prominent inventor based in Moriches, NY (US). He has made significant contributions to the field of semiconductor technologies, holding a total of 5 patents. His work focuses on developing advanced materials and systems that enhance the performance of radiation detectors and semiconductor materials.

Latest Patents

One of Ge Yang's latest patents involves a radiation detector. The technologies described for these semiconductor radiation detectors include a semiconductor material that features a first surface and a second surface, with the first surface opposite the second. This semiconductor material incorporates at least one metal component, which is effective in absorbing radiation and inducing a current pulse in response. Additionally, the semiconductor radiation detector includes an electrode contact, which consists of a metal-doped oxide deposited on the first surface of the semiconductor material.

Another notable patent addresses the production and distribution of dilute species in semiconducting materials. This technology outlines methods for producing a material by receiving a tertiary semiconductor sample that contains a dilute species. The sample has two ends, with the first end exhibiting a lower concentration of the dilute species compared to the second end. The method involves heating the sample in a chamber with two zones, where the first zone has a higher temperature than the second. The sample is oriented so that the first end is in the first zone and the second end is in the second zone.

Career Highlights

Ge Yang has worked with several reputable organizations throughout his career. Notably, he has been associated with Brookhaven Science Associates and Norfolk State University. His experience in these institutions has allowed him to further his research and development in semiconductor technologies.

Collaborations

Ge Yang has collaborated with notable colleagues, including Giuseppe Camarda and Anwar Hossain. These partnerships have contributed to the advancement of his innovative projects and patents.

Conclusion

Ge Yang's contributions to semiconductor technologies and radiation detection systems highlight his role as a significant inventor in the field. His innovative patents and collaborations reflect his commitment to advancing technology and improving material performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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