The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Feb. 12, 2016
Brookhaven Science Associates, Llc, Upton, NY (US);
Norfolk State University, Norfolk, VA (US);
Utpal N. Roy, Ridge, NY (US);
Ralph B. James, Ridge, NY (US);
Giuseppe Camarda, Farmingville, NY (US);
Yonggang Cui, Miller Place, NY (US);
Anwar Hossain, Port Jefferson Station, NY (US);
Ge Yang, Moriches, NY (US);
Aswini Pradhan, Norfolk, VA (US);
Rajeh Mundle, Norfolk, VA (US);
BROOKHAVEN SCIENCE ASSOCIATES, LLC, Upton, NY (US);
NORFOLK STATE UNIVERSITY, Norfolk, VA (US);
Abstract
Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.