Aswini Pradhan

Title: Aswini Pradhan: Innovator in Semiconductor Radiation Detection

Introduction

Aswini Pradhan is a notable inventor based in Norfolk, VA (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of radiation detectors. Her innovative work has led to the creation of a patent that showcases her expertise and dedication to advancing technology.

Latest Patents

Aswini Pradhan holds a patent for a radiation detector. The technology described involves semiconductor radiation detectors that comprise a semiconductor material. This material features a first surface and a second surface, with the first surface being opposite the second. The semiconductor material includes at least one metal component, which is effective in absorbing radiation and inducing a current pulse in response. Additionally, the semiconductor radiation detector comprises an electrode contact, which includes a metal-doped oxide deposited on the first surface of the semiconductor material. This metal-doped oxide incorporates the metal component element of the semiconductor material.

Career Highlights

Throughout her career, Aswini Pradhan has worked with reputable organizations, including Brookhaven Science Associates and Norfolk State University. Her experience in these institutions has allowed her to collaborate with other professionals in the field and contribute to groundbreaking research.

Collaborations

Aswini has had the opportunity to work alongside esteemed colleagues such as Utpal N Roy and Ralph B James. These collaborations have further enriched her research and development efforts in semiconductor technology.

Conclusion

Aswini Pradhan's contributions to the field of semiconductor radiation detection exemplify her innovative spirit and commitment to advancing technology. Her patent and collaborations highlight her role as a significant figure in the scientific community.