The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Oct. 25, 2013
Applicant:

Brookhaven Science Associates, Llc, Upton, NY (US);

Inventors:

Ralph B. James, Ridge, NY (US);

Giuseppe Camarda, Shoreham, NY (US);

Aleksey E. Bolotnikov, South Setauket, NY (US);

Anwar Hossain, Port Jefferson Station, NY (US);

Ge Yang, Moriches, NY (US);

Kihyun Kim, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/10 (2006.01); H01L 29/36 (2006.01); C30B 29/48 (2006.01); C30B 11/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); C30B 1/10 (2013.01); C30B 11/00 (2013.01); C30B 29/48 (2013.01);
Abstract

Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone.


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