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For the Inventor, By the Inventor

Katonah, NY, United States of America

Gary W Rubloff

This inventor holds 15 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1987-1994.

USPTO Granted Patents = 15

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 12

Forward Citations = 397(Granted Patents)


Location History:

  • Katonah, NY (US) (1987 - 1989)
  • Waccabuc, NY (US) (1988 - 1994)

Company Filing History:

goldMedal15 out of 166,209 
 
International Business Machines Corporation
 patents

Years Active: 1987-1994

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15 patents (USPTO):Explore Patents
1. 5290358 - Apparatus for directional low pressure chemical vapor deposition (DLPCVD) (1994-03-01),
2. 5284792 - Full-wafer processing of laser diodes with cleaved facets (1994-02-08),
3. 5155657 - High area capacitor formation using material dependent etching (1992-10-13),
4. 5153813 - High area capacitor formation using dry etching (1992-10-06),
5. 4886681 - Metal-polymer adhesion by low energy bombardment (1989-12-12),
6. 4845425 - Full chip integrated circuit tester (1989-07-04),
7. 4794863 - Motive structure for transporting workpieces (1989-01-03),
8. 4786864 - Photon assisted tunneling testing of passivated integrated circuits (1988-11-22),
9. 4784975 - Post-oxidation anneal of silicon dioxide (1988-11-15),
10. 4720401 - Enhanced adhesion between metals and polymers (1988-01-19),
11. 4706018 - Noncontact dynamic tester for integrated circuits (1987-11-10),
12. 4703260 - Full chip integrated circuit tester (1987-10-27),
13. 4692348 - Low temperature shallow doping technique (1987-09-08),
14. 4670710 - Noncontact full-line dynamic AC tester for integrated circuits (1987-06-02),
15. 4644264 - Photon assisted tunneling testing of passivated integrated circuits (1987-02-17),

Title: The Innovations of Gary W. Rubloff

Introduction

Gary W. Rubloff is a prominent inventor based in Katonah, NY (US). He has made significant contributions to the field of chemical vapor deposition and laser diode processing. With a total of 15 patents to his name, Rubloff's work has advanced the technology used in various applications.

Latest Patents

Rubloff's latest patents include an "Apparatus for directional low pressure chemical vapor deposition (DLPCVD)" and a "Method for full-wafer processing of laser diodes with cleaved facets." The DLPCVD patent discloses a system and method for controlling the thickness profile of deposited thin film layers over three-dimensional topography. This innovative approach allows for new shapes of the deposited thin film layer, including tapered shapes and enhanced coverage of trench structures. The method also enables voidless, seamless filling of trench or via structures, even at high aspect ratios.

The full-wafer processing patent combines the advantages of full-wafer processing with cleaved facets. It outlines a method that includes defining the position of facets to be cleaved, covering the upper portion with an etch mask pattern, and etching trenches into the structure. This process allows for the precise cleaving of laser diodes, enhancing their performance.

Career Highlights

Gary W. Rubloff is currently associated with International Business Machines Corporation (IBM). His work at IBM has been instrumental in developing advanced technologies that push the boundaries of innovation in the semiconductor industry.

Collaborations

Rubloff has collaborated with notable colleagues, including Johannes G. Beha and Russell W. Dreyfus. These partnerships have contributed to the successful development of his patents and innovations.

Conclusion

Gary W. Rubloff's contributions to the fields of chemical vapor deposition and laser diode processing have made a significant impact on technology. His innovative patents and work at IBM continue to influence advancements in the industry.

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