The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 1994

Filed:

Sep. 30, 1992
Applicant:
Inventors:

Gary W Rubloff, Waccabuc, NY (US);

Julian J Hsieh, Bronx, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118715 ; 118720 ; 118725 ; 4272481 ; 156613 ; 437 90 ; 437235 ; 437237 ;
Abstract

System and method for controlling the thickness profile of deposited thin film layers over three-dimensional topography are disclosed, wherein low pressure chemical vapor deposition conditions are employed with the reactant beam collimated and chosen to impinge at a specific angle onto the surface, such that the reactive sticking coefficient s.sub.r with the deposition surface is <1. Compared with conventional approaches, this method permits new shapes of the deposited thin film layer to be achieved over topography (such as trenches), including (i) tapered rather than re-entrant shapes (i.e., thicker at bottom rather than at top), (ii) enhanced sidewall and/or bottom coverage of trench structures (cf. the top surface), (iii) voidless, seamless filling of trench or via structures even at high aspect ratio (depth/width), and (iv) asymmetric sidewall coverage.


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