Shanghai, China

Gang Shan

This inventor holds 24 USPTO granted patents and 2 published patent applications, primarily in Memory Systems. Top assignees: Montage Technology Co., Ltd., Montage Technology (Shanghai) Co., Ltd., Montage Technology Group Limited. Active years: 2007-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gang Shan. Retrieved from https://idiyas.com/inventor/gang-shan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 24 

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 6

Forward Citations = 113(Granted Patents)


Company Filing History:


Years Active: 2007-2025

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Areas of Expertise:
Memory Controller
Access Control
Memory Module
Data Conversion
Processing Systems
Defect Testing
Dual-Mode Access
Calibration
Internal Memory
Registered DIMM
Read Enable Signal
Memory Interface
24 patents (USPTO):Explore Patents

Title: Inventor Gang Shan - Revolutionizing Technology in Shanghai

Introduction: Gang Shan is a visionary inventor based in Shanghai, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Gang Shan holds several patents in the areas of artificial intelligence, renewable energy, and smart devices, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Gang Shan has worked with leading tech companies in Shanghai, driving innovation and spearheading projects that have had a significant impact on the industry.

Collaborations: Throughout his career, Gang Shan has collaborated with top researchers, engineers, and developers both locally and internationally, fostering a culture of innovation and knowledge-sharing.

Conclusion: Gang Shan's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the field, with a lasting legacy that continues to inspire inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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