Gabriel J Gomez is a prominent inventor based in Plano, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work has been instrumental in advancing the capabilities of electronic devices.

Latest Patents

One of his latest patents is for an article hanger, which showcases his innovative approach to practical solutions. Another notable invention is a MOS transistor with varying channel width. This invention relates to a semiconductor device formed over a semiconductor body. In this device, source and drain regions are formed in the body about lateral edges of a gate electrode and are separated from one another by a gate length. A channel region, which is configured to allow charged carriers to selectively flow between the source and drain regions during operation of the device, has differing widths under the gate electrode. These widths are generally perpendicular to the gate length. Other devices, methods, and systems are also disclosed in his patents.

Career Highlights

Gabriel J Gomez is currently employed at Texas Instruments Corporation, where he continues to innovate and develop new technologies. His work at this leading company has allowed him to contribute to various projects that enhance electronic performance and efficiency.

Collaborations

Throughout his career, Gabriel has collaborated with talented individuals such as Baher S Haroun and Oguz Altun. These collaborations have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Gabriel J Gomez is a notable inventor whose work in semiconductor technology has led to several important patents. His contributions continue to shape the future of electronic devices, making him a key figure in the industry.

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