The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Dec. 19, 2007
Applicants:

Henry Litzmann Edwards, Garland, TX (US);

Tathagata Chatterjee, Allen, TX (US);

Mohamed Kamel Mahmoud, Wylie, TX (US);

Gabriel J. Gomez, Plano, TX (US);

Inventors:

Henry Litzmann Edwards, Garland, TX (US);

Tathagata Chatterjee, Allen, TX (US);

Mohamed Kamel Mahmoud, Wylie, TX (US);

Gabriel J. Gomez, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66659 (2013.01); H01L 21/28114 (2013.01); H01L 29/1045 (2013.01); H01L 29/4238 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01);
Abstract

One embodiment of the invention relates to a semiconductor device formed over a semiconductor body. In this device, source and drain regions are formed in the body about lateral edges of a gate electrode and are separated from one another by a gate length. A channel region, which is configured to allow charged carriers to selectively flow between the source and drain regions during operation of the device, has differing widths under the gate electrode. These widths are generally perpendicular to the gate length. Other devices, methods, and systems are also disclosed.


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