Cambridge, MA, United States of America

Fuwan Gan


Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2008-2011

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Fuwan Gan: Innovator in Silicon Photodetector Technology

Introduction

Fuwan Gan is a prominent inventor based in Cambridge, MA (US). He has made significant contributions to the field of opto-electronic devices, particularly in the development of silicon photodetectors. With a total of 2 patents to his name, Gan continues to push the boundaries of innovation in this area.

Latest Patents

Fuwan Gan's latest patents include a "System and method for providing a high frequency response silicon photodetector." This invention features a silicon photodetector that contains an insulating substrate with a top and bottom surface. The silicon layer on the top surface has a center region that is thicker than the surrounding areas. Additionally, a top silicon dioxide layer is positioned on the center region, which has doped left and right wings. The active region within the center region incorporates a tailored crystal defect-impurity combination along with oxygen atoms. Another notable patent is the "High-speed electronic carrier-injection modulator based on high-index-contrast Si-waveguide." This opto-electronic modulator utilizes a Mach-Zehnder structure with pin-diodes in both arms, effectively confining an optical mode within the device.

Career Highlights

Fuwan Gan is affiliated with the Massachusetts Institute of Technology, where he contributes to cutting-edge research and development in photonics and opto-electronics. His work has garnered attention for its innovative approach to enhancing the performance of silicon-based devices.

Collaborations

Gan has collaborated with esteemed colleagues such as Franz Xaver Kaertner and Michael W Geis. These partnerships have further enriched his research and development efforts, leading to advancements in the field.

Conclusion

Fuwan Gan's contributions to silicon photodetector technology exemplify his commitment to innovation and excellence. His patents reflect a deep understanding of the complexities involved in opto-electronic devices, positioning him as a key figure in this evolving field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…