Massachusetts Institute of Technology

Fuwan Gan

Franz Xaver Kaertner

Michael W Geis

Steven Jay Spector

Theodore M Lyszczarz

Matthew E Grein

Donna M Lennon

Robert T Schulein

Jung U Yoon

A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

System and method for providing a high frequency response silicon photodetector

An opto-electronic modulator includes a Mach-Zehnder structure that comprises pin-diodes in both arms of the Mach-Zehnder structure. The Mach-Zehnder structure is formed by waveguides so as to confine an optical mode in the opto-electronic modulator.

High-speed electronic carrier-injection modulator based on high-index-contrast Si-waveguide

Growing community of inventors

Cambridge, MA, United States of America

Fuwan Gan