The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Oct. 02, 2006
Michael W. Geis, Acton, MA (US);
Steven J. Spector, Arlington, MA (US);
Donna M. Lennon, Bedford, MA (US);
Matthew E. Grein, Cambridge, MA (US);
Robert T. Schulein, Watertown, MA (US);
Jung U. Yoon, Belmont, MA (US);
Franz Xaver Kaertner, Newtonville, MA (US);
Fuwan Gan, Cambridge, MA (US);
Theodore M. Lyszczarz, Concord, MA (US);
Michael W. Geis, Acton, MA (US);
Steven J. Spector, Arlington, MA (US);
Donna M. Lennon, Bedford, MA (US);
Matthew E. Grein, Cambridge, MA (US);
Robert T. Schulein, Watertown, MA (US);
Jung U. Yoon, Belmont, MA (US);
Franz Xaver Kaertner, Newtonville, MA (US);
Fuwan Gan, Cambridge, MA (US);
Theodore M. Lyszczarz, Concord, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.