Chengdu, China

Furen Lin

USPTO Granted Patents = 5 

 

Average Co-Inventor Count = 6.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2024

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5 patents (USPTO):

Title: Furen Lin: Innovator in Semiconductor Technology

Introduction

Furen Lin is a prominent inventor based in Chengdu, China, known for his significant contributions to semiconductor technology. With a total of five patents to his name, Lin has made remarkable advancements in the field, particularly in the design and fabrication of electronic devices.

Latest Patents

Among his latest patents, Lin has developed a multi-layer polysilicon stack for semiconductor devices. This innovative method involves forming a doped polysilicon layer over a semiconductor substrate, followed by a dielectric layer and an undoped polysilicon layer. Another notable patent is for a power MOSFET with a deep source contact. This method includes forming a plurality of closed loops over a semiconductor substrate, with each loop featuring a first and second polysilicon gate structure. The design enhances the efficiency and performance of electronic devices.

Career Highlights

Furen Lin is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced electronic components that are crucial for modern technology.

Collaborations

Lin collaborates with talented individuals in his field, including coworkers Yunlong Liu and Frank Alexander Baiocchi. Their combined expertise fosters an environment of innovation and creativity.

Conclusion

Furen Lin's contributions to semiconductor technology through his patents and work at Texas Instruments Corporation highlight his role as a leading inventor in the industry. His innovative methods are paving the way for future advancements in electronic devices.

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