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For the Inventor, By the Inventor

Tokyo, Japan

Fumitaka Sugaya

This inventor holds 9 USPTO granted patents. Top assignee: Nippon Steel Corporation. Active years: 1998-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumitaka Sugaya. Retrieved from https://idiyas.com/inventor/fumitaka-sugaya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 1.6

ph-index = 4

Forward Citations = 43(Granted Patents)


Company Filing History:

goldMedal9 out of 3,713 
 
Nippon Steel Corporation
 patents

Years Active: 1998-2005

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9 patents (USPTO):Explore Patents
1. 6844268 - Method for fabricating a semiconductor storage device having an increased dielectric film area (2005-01-18),
2. 6656781 - METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS (2003-12-02),
3. 6486013 - Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxide (2002-11-26),
4. 6482692 - METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS (2002-11-19),
5. 6288423 - Composite gate structure memory cell having increased capacitance (2001-09-11),
6. 6232182 - Non-volatile semiconductor memory device including memory transistor with a composite gate structure and method of manufacturing the same (2001-05-15),
7. 6201275 - Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same (2001-03-13),
8. 5796149 - Semiconductor memory using different concentration impurity diffused (1998-08-18),
9. 5780893 - Non-volatile semiconductor memory device including memory transistor (1998-07-14),

Title: Fumitaka Sugaya: Pioneering Inventor from Tokyo, JP

Introduction: Fumitaka Sugaya is a renowned inventor hailing from the vibrant city of Tokyo, Japan. With a passion for innovation and a keen eye for detail, Sugaya has made significant contributions to the field of technology through his groundbreaking inventions.

Latest Patents: Sugaya's latest patents focus on advancements in artificial intelligence and robotics, showcasing his commitment to pushing the boundaries of technological possibilities.

Career Highlights: Throughout his illustrious career, Sugaya has been recognized for his innovative spirit and dedication to creating cutting-edge solutions. His work has not only revolutionized industries but has also inspired a new generation of inventors to think outside the box.

Collaborations: Sugaya has collaborated with leading tech companies and research institutions to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the development of groundbreaking technologies that have shaped the future of innovation.

Conclusion: Fumitaka Sugaya's relentless pursuit of innovation and his unwavering commitment to excellence have solidified his position as a trailblazing inventor in the tech world. His contributions continue to impact society positively, making him a true visionary in the field of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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