The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Apr. 14, 1998
Fumitaka Sugaya, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
A semiconductor device of the present invention is a semiconductor memory having a charge storage film. Recesses or holes which effectively increase the capacitance of a floating gate or a memory cell capacitor are formed in the charge storage film. These recesses or holes are formed at the same time the floating gate electrode or the lower electrode of the capacitor is isolated into the form of islands. A dielectric film and a polysilicon film is formed on the isolated island floating gate electrodes or lower electrodes. These recesses or holes increase the surface area of the dielectric film and improve the write and erase characteristics of a memory cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile