Tokyo, Japan

Fuminori Itoh

This inventor holds 2 USPTO granted patents. Top assignee: Nec Corporation. Active years: 2004-2011.


% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2004-2011

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2 patents (USPTO):Explore Patents

Title: Fuminori Itoh: Innovator in Semiconductor Technology

Introduction

Fuminori Itoh is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to materials and processes.

Latest Patents

His latest patents include a porous insulating film and a method for producing the same, as well as a semiconductor device utilizing this technology. The invention provides a process for creating a porous insulating film that serves effectively as an insulating layer in semiconductor devices. This process involves introducing gas containing molecule vapor of organic silica compounds into plasma, which facilitates the growth of the porous insulating film on a semiconductor substrate. Additionally, he has developed methods for fabricating nano-tubes, manufacturing field-emission type cold cathodes, and creating display devices. These methods enhance the flatness of the emitter surface, resulting in a uniform and stable high-emission electric current.

Career Highlights

Fuminori Itoh is associated with NEC Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and effective.

Collaborations

He has collaborated with notable coworkers, including Akihiko Okamoto and Kenichiro Hijioka, contributing to various projects that push the boundaries of semiconductor innovation.

Conclusion

Fuminori Itoh's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices and materials.

Profile summary based on public USPTO records.
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