The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Nov. 29, 2004
Yoshimichi Harada, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Fuminori Itoh, Tokyo, JP;
Kenichiro Hijioka, Tokyo, JP;
Tsuneo Takeuchi, Tokyo, JP;
Yoshimichi Harada, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Fuminori Itoh, Tokyo, JP;
Kenichiro Hijioka, Tokyo, JP;
Tsuneo Takeuchi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The present invention provides a process of producing a porous insulating film effective as an insulating film constituting a semiconductor device and a process of producing a porous insulating film having high adhesion to a semiconductor material, which is in contact with the upper and lower interfaces of the insulating film. Gas containing molecule vapor of at least one or more organic silica compounds, which have a cyclic silica skeleton in its molecule and have at least one or more unsaturated hydrocarbon groups bound with the cyclic silica skeleton is introduced into plasma to grow a porous insulating film on a semiconductor substrate.