Nec Corporation

Fuminori Itoh

Yoshihiro Hayashi

Akihiko Okamoto

Kenichiro Hijioka

Tsuneo Takeuchi

Yoshimichi Harada

The present invention provides a process of producing a porous insulating film effective as an insulating film constituting a semiconductor device and a process of producing a porous insulating film having high adhesion to a semiconductor material, which is in contact with the upper and lower interfaces of the insulating film. Gas containing molecule vapor of at least one or more organic silica compounds, which have a cyclic silica skeleton in its molecule and have at least one or more unsaturated hydrocarbon groups bound with the cyclic silica skeleton is introduced into plasma to grow a porous insulating film on a semiconductor substrate.

Porous insulating film, method for producing the same, and semiconductor device using the same

A method of fabricating a nano-tube that enables shortly cutting off the nano-tube without deteriorating the same and that when the nano-tube is used as the emitter can provide an improved flat-ability of the surface of the emitter, a method of manufacturing a field-emission type cold cathode that can provide an improved flat-ability of the surface of the emitter and that resultantly can cause an emission of a uniform, stable high-emission electric current, and a method of manufacturing a display device that includes a method of fabricating a nano-tube and/or a method of manufacturing a field-emission type cold cathode. The method of fabricating a nano-tube according to the present invention includes the step of radiating ions into a nano-tube and the step of oxidizing the nano-tube.

Growing community of inventors

Tokyo, Japan

Fuminori Itoh