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Fumihiro Kono

USPTO Granted Patents = 19 (Patent Applications = 5)

Average Co-Inventor Count = 1.1

ph-index = 5

Forward Citations = 64(Granted Patents)

Company Filing History:

13 out of 52,766

Kabushiki Kaisha Toshiba

patents

3 out of 2,955

Toshiba Memory Corporation

Years Active: 2010-2024

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19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12125542 - Semiconductor memory device (2024-10-22),

2. 11917826 - Semiconductor memory device with three-dimensional memory cells (2024-02-27),

3. 11430805 - Semiconductor memory device including three-dimensional memory cell arrays (2022-08-30),

4. 10672794 - Semiconductor memory device including three-dimensional memory cell arrays (2020-06-02),

5. 10332907 - Semiconductor memory device with three-dimensional memory cells (2019-06-25),

6. 9929173 - Method of controlling a semiconductor memory device (2018-03-27),

7. 9508740 - 3D stacked semiconductor memory architecture with conductive layer arrangement (2016-11-29),

8. 9281016 - 3D stacked semiconductor memory devices with sense amplifier electrically connected to a selecting circuit (2016-03-08),

9. 8873330 - Semiconductor memory device (2014-10-28),

10. 8817512 - Semiconductor memory device (2014-08-26),

11. 8804420 - Semiconductor memory device (2014-08-12),

12. 8787061 - Semiconductor memory device (2014-07-22),

13. 8416605 - Non-volatile semiconductor storage device (2013-04-09),

14. 8406036 - Semiconductor memory device (2013-03-26),

15. 8391052 - Nonvolatile semiconductor memory device (2013-03-05),

Title: Fumihiro Kono: Innovator in Semiconductor Memory Technology

Introduction: Fumihiro Kono is a prominent inventor based in Yokohama, Japan, known for his significant contributions to semiconductor memory devices. With a remarkable portfolio of 19 patents, Kono has been at the forefront of advancements in memory technology, particularly in designing innovative solutions for efficient data storage and retrieval.

Latest Patents: Kono’s latest innovations include a transformative semiconductor memory device that features a complex structure consisting of multiple word lines, select gate lines, and semiconductor layers. This invention ensures improved performance by positioning the select gate lines at varying distances from the substrate. Another noteworthy patent describes a semiconductor memory device with three-dimensional memory cells. This device is characterized by a memory cell array with stacked memory units, allowing for enhanced density and efficiency in memory storage through strategic staggered arrangements.

Career Highlights: Throughout his career, Fumihiro Kono has had valuable tenures at notable companies, including Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His work has not only expanded the boundaries of semiconductor technology but has also played a crucial role in improving the technology used in portable devices and computing systems.

Collaborations: Kono's innovative journey has been enriched by collaborations with talented individuals such as Kiyotaro Itagaki and Wataru Moriyama. These partnerships have facilitated the development and refinement of cutting-edge technologies, contributing to Kono's success as a leading inventor in the semiconductor industry.

Conclusion: Fumihiro Kono's extensive patent portfolio and his unwavering dedication to enhancing semiconductor memory technology have established him as a key player in the field. His innovative designs continue to influence the evolution of memory devices, showcasing the critical interplay between creativity and technology in driving future advancements.

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