Fumiaki Maruyama

Title: Fumiaki Maruyama: Innovator in Silicon Wafer Technology

Introduction

Fumiaki Maruyama is a notable inventor based in Gunma-gun, Japan. He has made significant contributions to the field of silicon wafer technology, holding a total of 3 patents. His work focuses on improving the quality and manufacturing processes of silicon wafers, which are essential components in the semiconductor industry.

Latest Patents

Maruyama's latest patents include innovative methods for producing silicon wafers that maintain high quality while minimizing boron contamination. One of his patents describes a silicon wafer that is stabilized in quality and manufactured by restricting boron contamination from the environment. This wafer is characterized by an attached boron amount of 1×10 atoms/cm or less. To achieve this, the wafer is treated in an atmosphere with a boron concentration of 15 ng/m or less, utilizing boron-less filters and boron adsorbing filters in clean rooms to lower the boron concentration.

Another significant patent outlines a final polishing method for silicon single crystal wafers. This method involves final polishing at a rate of 10 nm/min or below, which helps to reduce Polishing Induced Defects (PIDs). The process ensures that the silicon single crystal wafer is polished effectively, resulting in a high-quality product.

Career Highlights

Fumiaki Maruyama is associated with Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work at the company has been instrumental in advancing silicon wafer technology and enhancing manufacturing processes.

Collaborations

Maruyama has collaborated with notable colleagues, including Naoki Naito and Atsuo Uchiyama. Their combined expertise has contributed to the development of innovative solutions in the field of silicon wafers.

Conclusion

Fumiaki Maruyama's contributions to silicon wafer technology have made a significant impact on the semiconductor industry. His innovative patents and dedication to quality manufacturing processes continue to influence advancements in this critical field.