The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Jan. 29, 2008
Naoto Iizuka, Chiyoda, JP;
Hirotaka Kurimoto, Jyoetsu, JP;
Koichi Kosaka, Chikuma, JP;
Fumiaki Maruyama, Takasaki, JP;
Naoto Iizuka, Chiyoda, JP;
Hirotaka Kurimoto, Jyoetsu, JP;
Koichi Kosaka, Chikuma, JP;
Fumiaki Maruyama, Takasaki, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.