Shin-etsu Handotai Co., Ltd.

Fumiaki Maruyama

Atsuo Uchiyama

Naoki Naito

Hirotaka Kurimoto

Naoto Iizuka

Koichi Kosaka

Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1&#xd7;10atoms/cmor less. In order to manufacture such a wafer as contains a small amount of boron attached on the wafer surface, the wafer is treated in an atmosphere of boron concentration of 15 ng/mor less. Boron-less filters and boron adsorbing filters are used as filters in a clean room and the like so as to lower the boron concentration in the atmosphere.

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The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.

Final polishing method for silicon single crystal wafer and silicon single crystal wafer

Wafer and epitaxial wafer, and manufacturing processes therefor

Growing community of inventors

Gunma-gun, Japan

Fumiaki Maruyama