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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ful-Long Ni

USPTO Granted Patents = 12

Average Co-Inventor Count = 2.8

ph-index = 5

Forward Citations = 100(Granted Patents)


Location History:

  • Hsin-Chu City, TW (2003)
  • Hsinchu, TW (1999 - 2011)

Company Filing History:

goldMedal12 out of 3,601 
 
Macronix International Co., Ltd.
 patents

Years Active: 1999-2011

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12 patents (USPTO):Explore Patents
1. 7929365 - Memory structure, programming method and reading method therefor, and memory control circuit thereof (2011-04-19),
2. 7558149 - Method and apparatus to control sensing time for nonvolatile memory (2009-07-07),
3. 7443753 - Memory structure, programming method and reading method therefor, and memory control circuit thereof (2008-10-28),
4. 7330376 - Method for memory data storage by partition into narrower threshold voltage distribution regions (2008-02-12),
5. 6870752 - High density mask ROM having flat-type bank select (2005-03-22),
6. 6621756 - Compact integrated circuit with memory array (2003-09-16),
7. 6621129 - MROM memory cell structure for storing multi level bit information (2003-09-16),
8. 6535432 - Method of erasing a non-volatile memory (2003-03-18),
9. 6468869 - Method of fabricating mask read only memory (2002-10-22),
10. 6178118 - Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages (2001-01-23),
11. 6028790 - Method and device for programming a non-volatile memory cell by (2000-02-22),
12. 5959892 - Apparatus and method for programming virtual ground EPROM array cell (1999-09-28),

Title: Exploring the Innovations of Inventor Ful-Long Ni

Introduction: Ful-Long Ni is a prominent inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions in the field of memory structures and control circuits. With a remarkable portfolio of 12 patents, Ni has made significant advancements that enhance the sensing accuracy of memory cells, thereby driving innovation in nonvolatile memory technology.

Latest Patents: Among his latest patents, Ful-Long Ni has developed a memory structure that improves the sensing accuracy of memory cells by segmenting the main array into several memory units. Each unit is equipped with a specific set of reference currents tailored to its threshold voltage distribution, ensuring that the memory cells are sensed correctly and improving overall accuracy. Additionally, he has patented a method and apparatus for controlling sensing time in nonvolatile memory, utilizing multiple clock signals to manage sense amplifier measurements. By selecting the appropriate clock signal, the method allows for precise characterization of threshold voltage measurements, ultimately boosting the reliability of memory operations.

Career Highlights: Ni's career has been marked by his position at Macronix International Co., Ltd., a leading company specializing in memory solutions. His work has not only earned him multiple patents but has also contributed significantly to the advancement of memory technology in various applications.

Collaborations: Throughout his career, Ful-Long Ni has collaborated with esteemed colleagues, including Chin-Hsi Lin and Chung-Kuang Chen. These partnerships foster a dynamic exchange of ideas and expertise, further driving innovation in their respective fields.

Conclusion: Inventor Ful-Long Ni stands out in the realm of memory technology through his innovative patents and collaborative efforts. His contributions continue to pave the way for advancements in nonvolatile memory systems, showcasing the importance of innovation and teamwork in the pursuit of technological excellence.

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