Company Filing History:
Years Active: 2006-2008
Title: Innovations in Semiconductor Technology: The Contributions of Fu-Liaog Yang
Introduction
Fu-Liaog Yang, an accomplished inventor based in Hsin-Chu, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of two patents to his name, Yang's work is crucial in advancing the capabilities of integrated circuits, particularly regarding high-k gate dielectrics.
Latest Patents
Yang's latest innovations include the following patents:
1. **Methods of Forming Semiconductor Devices with High-k Gate Dielectric**: This patent details a method for fabricating an integrated circuit. It involves forming a first gate dielectric portion on a substrate in a first transistor region, utilizing a high-permittivity dielectric material. The first gate dielectric portion features a specific equivalent silicon oxide thickness that is unique to its structure. Additionally, it establishes a second gate dielectric portion on a different region of the substrate, which includes the same high-permittivity material but has a differing equivalent silicon oxide thickness.
2. **Semiconductor Device with High-k Gate Dielectric**: In this patent, Yang describes an integrated circuit comprising a substrate, a first transistor, and a second transistor. The first transistor is equipped with a gate dielectric portion that incorporates high-permittivity dielectric materials and is positioned between the gate electrode and substrate. The second transistor's gate dielectric portion mirrors this design but may feature a different equivalent silicon oxide thickness, demonstrating the versatility in design that Yang's innovations offer.
Career Highlights
Fu-Liaog Yang is employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in high-k gate dielectrics not only showcases his innovative spirit but also highlights his significant role in enhancing semiconductor device performance.
Collaborations
Throughout his career, Yang has collaborated with distinguished colleagues, including Chun-Chieh Lin and Wen-Chin Lee. These partnerships enhance the development and refinement of semiconductor technologies, driving progress in the field.
Conclusion
Fu-Liaog Yang represents the forefront of innovation in semiconductor technology. His patents reflect a deep understanding of materials science and engineering principles, contributing to the evolution of integrated circuits. As the industry continues to advance, the impacts of Yang's work are likely to resonate, paving the way for future developments in the realm of semiconductors.