The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Apr. 26, 2004
Chun-chieh Lin, Hsin-Chu, TW;
Wen-chin Lee, Hsin-Chu, TW;
Chenming HU, Hsin-Chu, TW;
Shang-chih Chen, Hsin-Chu, TW;
Chih-hao Wang, Hsin-Chu, TW;
Fu-liaog Yang, Hsin-Chu, TW;
Ye-chia Yeng, Hsin-Chu, TW;
Chun-Chieh Lin, Hsin-Chu, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Chenming Hu, Hsin-Chu, TW;
Shang-Chih Chen, Hsin-Chu, TW;
Chih-Hao Wang, Hsin-Chu, TW;
Fu-Liaog Yang, Hsin-Chu, TW;
Ye-Chia Yeng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit includes a substrate, a first transistor, and a second transistor. The first transistor has a first gate dielectric portion located between a first gate electrode and the substrate. The first gate dielectric portion includes a first high-permittivity dielectric material and/or a second high-permittivity dielectric material. The first gate dielectric portion has a first equivalent silicon oxide thickness. The second transistor has a second gate dielectric portion located between a second gate electrode and the substrate. The second gate dielectric portion includes the first high-permittivity dielectric material and/or the second high-permittivity dielectric material. The second gate dielectric portion has a second equivalent silicon oxide thickness. The second equivalent silicon oxide thickness may be different than the first equivalent silicon oxide thickness.